$ define eSiGe stress here, 1e10 dynes/cm2=1GPa assign name=esige n.val="-2e10" assign name=esigelab n.val=-1*@esige/1e7 assign name=rf n.val="0.1" $ Here rf is relaxation factor assign name=tetch n.val="0.03" assign name=tspacer n.val="0.024" assign name=Lg n.val="0.042" $gate length $ ASSIGN NAME OF THE OUTPUT FILE assign name=theoutfile c.v=Out_@esigelab_rf $ DEFINE THE SIMULATION GRID assign name=basic n.val=0.001 assign name=tight n.val=0.002 $ pitch is 200nm, here is a full MOS mesh line x location=-0.1 spacing=10*@basic tag=left line x location=-(@Lg/1+@tspacer*6/5)*1.2 spacing=5*@basic line x location=-@Lg/2-@tspacer*6/5 spacing=@tspacer/20 line x location=-@Lg/2-@Lg/4 spacing=(@Lg/30+@tspacer/20)/2 line x location=-@Lg/2 spacing=@Lg/30 line x location=0 spacing=@Lg/30 line x location=@Lg/2 spacing=@Lg/30 line x location=@Lg/2+@Lg/4 spacing=(@Lg/30+@tspacer/20)/2 line x location=@Lg/2+@tspacer*6/5 spacing=@tspacer/20 line x location=(@Lg/2+@tspacer*6/5)*1.2 spacing=5*@basic line x location=0.1 spacing=10*@basic tag=right line y location=0 spacing=@basic tag=boxtop line y location=0.08 spacing=10*@basic tag=bottom $ DEFINE THE MATERIALS PROPERTIES material material=SiGeAlloy new young.m=1.87e12 poiss.r=0.28 intrin.s=@esige*(1-@rf) material material=silicon young.m=1.70e12 poiss.r=0.26 material material=HfOxide new young.m=2.50e12 poiss.r=0.29 $Define the High-k material HfO2 $ DEFINE REGIONS region material=silicon xlo=left xhi=right ylo=boxtop yhi=bottom $ INITIALIZE THE STRUCTURE initialize <100> boron=1e15 SELECT Z=1 TITLE="initial substrate" PLOT.2D grid X.MIN=-0.08 X.MAX=0.08 Y.MAX=0.08 Y.MIN=-0.05 C.GRID=2 select z=1 print layers x.value=0 $ DEFINE THE SOLUTION METHODS method st.histo ^skip.sil viscoela $ DEVICE FABRICATION STEPS $Deposit and etch gate deposit material=HfOxide thick=0.0030 dy=@basic deposit material=polysilicon thick=0.042 dy=0.0025 etch material=polysilicon right p1.x=@Lg/2 etch material=polysilicon left p1.x=-@Lg/2 etch material=HfOxide right p1.x=@Lg/2 etch material=HfOxide left p1.x=-@Lg/2 SELECT Z=1 TITLE="gate stack patterning" PLOT.2D X.MIN=-0.08 X.MAX=0.08 Y.MAX=0.08 Y.MIN=-0.05 C.GRID=2 color oxide color=7 color silicon color=6 color material=SiGeAlloy color=5 color material=polysilicon color=4 color material=HfOxide color=3 select z=1 print layers x.value=0 $Deposit oxide deposit material=oxide thick=@tspacer dy=0.0025 SELECT Z=1 TITLE="Deposit oxide" PLOT.2D X.MIN=-0.08 X.MAX=0.08 Y.MAX=0.08 Y.MIN=-0.05 C.GRID=2 color oxide color=7 color silicon color=6 color material=SiGeAlloy color=5 color material=polysilicon color=4 color material=HfOxide color=3 $ etch spacer ETCH material=OXIDE START X=-@Lg/2-@tspacer Y=-0.045-@tspacer ETCH CONTINUE X=@Lg/2+@tspacer Y=-0.045-@tspacer ETCH CONTINUE X=@Lg/2+@tspacer Y=-0.045 ETCH DONE X=-@Lg/2-@tspacer Y=-0.045 etch right p1.x=@Lg/2+@tspacer p2.y=0 etch left p1.x=-@Lg/2-@tspacer p2.y=0 etch right p1.x=@Lg/[email protected] p2.y=-0.0185 etch left p1.x=-@Lg/2-@tspacer+0.01 p2.y=-0.0185 etch right p1.x=@Lg/[email protected] p1.y=-0.0185 p2.x=@Lg/2+@tspacer p2.y=0 etch left p1.x=-@Lg/2-@tspacer+0.01 p1.y=-0.0185 p2.x=-@Lg/2-@tspacer p2.y=0 SELECT Z=1 TITLE="etch oxide spacer" PLOT.2D X.MIN=-0.08 X.MAX=0.08 Y.MAX=0.08 Y.MIN=-0.05 C.GRID=2 color oxide color=7 color silicon color=6 color material=SiGeAlloy color=5 color material=polysilicon color=4 color material=HfOxide color=3 select z=1 print layers x.value=0 $Etch source/drain etch right p1.x=@Lg/2+@tspacer p1.y=0 p2.x=0.03 p2.y=0.026 etch left p1.x=-@Lg/2-@tspacer p1.y=0 p2.x=-0.03 p2.y=0.026 etch right p1.x=0.03 p1.y=0.026 p2.x=0.072 p2.y=0.077 etch left p1.x=-0.03 p1.y=0.026 p2.x=-0.072 p2.y=0.077 SELECT Z=1 TITLE="Etch source/drain" PLOT.2D X.MIN=-0.08 X.MAX=0.08 Y.MAX=0.08 Y.MIN=-0.05 C.GRID=2 color oxide color=7 color silicon color=6 color material=SiGeAlloy color=5 color material=polysilicon color=4 color material=HfOxide color=3 select z=1 print layers x.value=0 $Deposite S/D DEPOSIT material=SiGeAlloy THICKNES=0.3 SPAC=100 + etch material=SiGeAlloy thick=0.3 etch right p1.x=@Lg/[email protected] p2.y=-0.0185 etch left p1.x=-@Lg/2-@tspacer+0.01 p2.y=-0.0185 etch right p1.x=@Lg/[email protected] p1.y=-0.0185 p2.x=@Lg/2+@tspacer p2.y=0 etch left p1.x=-@Lg/2-@tspacer+0.01 p1.y=-0.0185 p2.x=-@Lg/2-@tspacer p2.y=0 etch right p1.x=@Lg/2+@tspacer p1.y=0 p2.x=0.053 p2.y=0.011 etch left p1.x=-@Lg/2-@tspacer p1.y=0 p2.x=-0.053 p2.y=0.011 - SELECT Z=1 TITLE="SiGe deposition" PLOT.2D X.MIN=-0.08 X.MAX=0.08 Y.MAX=0.08 Y.MIN=-0.05 C.GRID=2 color oxide color=7 color silicon color=6 color material=SiGeAlloy color=5 color material=polysilicon color=4 color material=HfOxide color=3 select z=1 print layers x.value=0 $deposit silicon DEPOSIT SILICON THICKNES=0.65 SPAC=100 + ETCH SILICON RIGHT p1.x=-0.08 p2.y=-0.05 SELECT Z=1 TITLE="Si deposition" PLOT.2D X.MIN=-0.08 X.MAX=0.08 Y.MAX=0.08 Y.MIN=-0.05 C.GRID=2 color oxide color=7 color silicon color=6 color material=SiGeAlloy color=5 color material=polysilicon color=4 color material=HfOxide color=3 select z=1 print layers x.value=0 SELECT Z=1 TITLE="final mesh" PLOT.2D grid X.MIN=-0.08 X.MAX=0.08 Y.MAX=0.08 Y.MIN=-0.05 C.GRID=2 $SAVE THE OUTPUT savefile [email protected] tif SELECT Z=Sxx EXTRACT OUT.FILE=Stress.txt + PREFIX="% depth vs Sxx simulated, vertical cut at x=0" FOREACH DEPTH (-0.05 TO 0.08 STEP 0.0005) EXTRACT SILICON x=0.0 DISTANCE=@{DEPTH} + Y.EXT VAL.EXT END EXTRACT CLOSE $SELECT Z=1 TITLE="Structure" $PLOT.2D X.MIN=-0.05 X.MAX=0.05 Y.MAX=0.04 Y.MIN=-0.1 SELECT Z=1 TITLE="Structure" PLOT.2D X.MIN=-0.08 X.MAX=0.08 Y.MAX=0.08 Y.MIN=-0.05 $SELECT Z=Sxx TITLE="Contours of Sxx" $PLOT.2D X.MIN=-0.05 X.MAX=0.05 Y.MAX=0.04 Y.MIN=-0.1 SELECT Z=Sxx TITLE="Contours of Sxx" PLOT.2D X.MIN=-0.08 X.MAX=0.08 Y.MAX=0.08 Y.MIN=-0.05 $SELECT Z=Sxx+Syy TITLE="Contours of Sxx" $PLOT.2D X.MIN=-0.05 X.MAX=0.05 Y.MAX=0.04 Y.MIN=-0.1 SELECT Z=Sxx Color MIN.V=-3e10 MAX.V=-2e10 COLOR=-2+4 SELECT Z=Sxx Color MIN.V=-2e10 MAX.V=-1.7e10 COLOR=-1+4 SELECT Z=Sxx Color MIN.V=-1.7e10 MAX.V=-1.5e10 COLOR=0+4 SELECT Z=Sxx Color MIN.V=-1.5e10 MAX.V=-1.2e10 COLOR=1+4 SELECT Z=Sxx Color MIN.V=-1.2e10 MAX.V=-1e10 COLOR=3+4 SELECT Z=Sxx Color MIN.V=-1e10 MAX.V=-0.8e10 COLOR=4+4 SELECT Z=Sxx Color MIN.V=-0.8e10 MAX.V=-0.6e10 COLOR=5+4 SELECT Z=Sxx Color MIN.V=-0.6e10 MAX.V=-0.4e10 COLOR=6+4 SELECT Z=Sxx Color MIN.V=-0.4e10 MAX.V=0e10 COLOR=7+4 SELECT Z=Sxx Color MIN.V=0e10 MAX.V=0.5e10 COLOR=8+4 SELECT Z=Sxx Color MIN.V=0.5e10 MAX.V=1e10 COLOR=9+4 SELECT Z=Sxx Color MIN.V=1e10 MAX.V=1.5e10 COLOR=10+4 SELECT Z=Sxx Color MIN.V=1.5e10 MAX.V=2e10 COLOR=11+4 LABEL X=-0.04 Y=0.05 LABEL="-3 to -2G" C.RECT=-2+4 W.R=0.4 H.R=0.4 LABEL X=-0.04 Y=0.04 LABEL="-2 to -1.7G" C.RECT=-1+4 W.R=0.4 H.R=0.4 LABEL X=-0.04 Y=0.03 LABEL="-1.7 to -1.5G" C.RECT=0+4 W.R=0.4 H.R=0.4 LABEL X=-0.04 Y=0.02 LABEL="-1.5 to -1.2G" C.RECT=1+4 W.R=0.4 H.R=0.4 LABEL X=-0.04 Y=0.01 LABEL="-1.2 to -1G" C.RECT=3+4 W.R=0.4 H.R=0.4 LABEL X=-0.04 Y=0 LABEL="-1 to -0.8G" C.RECT=4+4 W.R=0.4 H.R=0.4 LABEL X=0.04 Y=0.05 LABEL="-0.8 to -0.6 G" C.RECT=5+4 W.R=0.4 H.R=0.4 LABEL X=0.04 Y=0.04 LABEL="-0.6 to -0.4G" C.RECT=6+4 W.R=0.4 H.R=0.4 LABEL X=0.04 Y=0.03 LABEL="-0.4 to -0.0G" C.RECT=7+4 W.R=0.4 H.R=0.4 LABEL X=0.04 Y=0.02 LABEL="0 to 0.5G" C.RECT=8+4 W.R=0.4 H.R=0.4 LABEL X=0.04 Y=0.01 LABEL="0.5 to 1G" C.RECT=9+4 W.R=0.4 H.R=0.4 LABEL X=0.04 Y=0.00 LABEL="1 to 1.5G" C.RECT=10+4 W.R=0.4 H.R=0.4 LABEL X=0.04 Y=-0.01 LABEL="1.5 to 2G" C.RECT=11+4 W.R=0.4 H.R=0.4